April 1, 2023

I am pleased to inform you that I have started a new research position as Staff Engineer at Samsung Advanced Institute of Technology (SAIT)!

January 11, 2023

My research "High Performance and Low Power Source-Gatesd Transistors Enabled by a Solution Processed Metal Oxide Homojunction" is now published in the Proceedings of the National Academy of Sciences (PNAS)

In this work, I applied a functional scanning probe characterization technique to reveal the operating principle of solution-processed In2O3 TFT. Doping- and contact-engineered solution-processed In2O3 TFTs performed strong output saturation, which allows for <1V of operating voltage and ≈25 μW of operating power. Operando-KPFM revealed that the exceptional output saturation is due to the Schottky barrier at the source contact, i.e., the device was operating in a source-gated transistor (SGT) regime. This work will provide a novel approach for low-cost power-efficient TFTs. 

December 27, 2022

My work "Edge and Interface Resistances Create Distinct Trade-Offs When Optimizing the Microstructure of Printed van der Waals Thin-Film Transistors" is published in ACS Nano!

In contrast to the excellent electronic transport performance of single-sheet MoS2 FETs, MoS2 (or any other 2D semiconductor)-based printed TFTs suffer from poor electrostatic gating, low mobility, and/or high off-current. This paper, led by Zhehao Zhu, investigates the mechanism of such performance degradation of printed films, via a combination of scanning probe microscopy characterization and resistor network modeling. The charged edges of MoS2 flakes induce an electrostatic gating effect on adjacent flakes, causing performance degradation. 

November 30, 2022

I presented my work "Reconfigurable Source-Gated Transistor Based on 2D Ferroelectric Heterostructure" at the MRS Fall Meeting in Boston. In the talk, I shared how the power efficiency of monolayer MoS2 FETs can be further enhanced, by the formation of heterojunction with ferroelectric semiconductor α-In2Se3.

October 4, 2022

I am excited to share that my work "Strain-Modulated Interlayer Charge and Energy Transfers in MoS2/WS2 Heterobilayer" is now published online in ACS Applied Materials & Interface!

Charge and energy transfers are physical phenomena that define the optical and electronic properties of 2D heterostructures. By the use of compressive strain, the interaction between monolayer MoS2 and WS2 has been greatly enhanced, resulting in non-monotonic, selective modulation of charge and energy transfer. This is an innovative approach (i.e., mechanical) to modulate the 2D heterostructures' properties that can be adopted for mechanical sensors and straintronics. 

August 30, 2022

I am pleased to share that my collaborative research "Readily Accessible Metallic Micro Island Arrays for High-Performance Metal Oxide Thin-Film Transistors" was published in Advanced Materials! 

December 1, 2021

I presented my recent research at the MRS Fall Meeting, titled "Localization and Modulation of Excitonic Emission in MoS with Mixed-Dimensional Ferroelectric Heterostructures". I presented how ferroelectric switching reconfigures excitonic emissions in monolayer MoS₂.